Cause of triode mode in MOSFET












1














My reference text introduces the MOFSET as follows:



MOFSET image



The text says the induced channel has uniform width as long as $v_{DS}$ is small, because in that case $v_{GD} = v_{GS} - v_{DS} approx v_{GS}$, and if this is violated, then the width of the channel near the drain decreases. I don't really understand why, nor how this is relevant to the width of the channel. Shouldn't $v_{DS}$ be uniform across the drain? Then wouldn't all components of the electric field be horizontal?










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  • 1




    Read this ittc.ku.edu/~jstiles/312/handouts/… (page 5,6 ). And this also can help ittc.ku.edu/~jstiles/312/handouts/…
    – G36
    4 hours ago
















1














My reference text introduces the MOFSET as follows:



MOFSET image



The text says the induced channel has uniform width as long as $v_{DS}$ is small, because in that case $v_{GD} = v_{GS} - v_{DS} approx v_{GS}$, and if this is violated, then the width of the channel near the drain decreases. I don't really understand why, nor how this is relevant to the width of the channel. Shouldn't $v_{DS}$ be uniform across the drain? Then wouldn't all components of the electric field be horizontal?










share|improve this question


















  • 1




    Read this ittc.ku.edu/~jstiles/312/handouts/… (page 5,6 ). And this also can help ittc.ku.edu/~jstiles/312/handouts/…
    – G36
    4 hours ago














1












1








1







My reference text introduces the MOFSET as follows:



MOFSET image



The text says the induced channel has uniform width as long as $v_{DS}$ is small, because in that case $v_{GD} = v_{GS} - v_{DS} approx v_{GS}$, and if this is violated, then the width of the channel near the drain decreases. I don't really understand why, nor how this is relevant to the width of the channel. Shouldn't $v_{DS}$ be uniform across the drain? Then wouldn't all components of the electric field be horizontal?










share|improve this question













My reference text introduces the MOFSET as follows:



MOFSET image



The text says the induced channel has uniform width as long as $v_{DS}$ is small, because in that case $v_{GD} = v_{GS} - v_{DS} approx v_{GS}$, and if this is violated, then the width of the channel near the drain decreases. I don't really understand why, nor how this is relevant to the width of the channel. Shouldn't $v_{DS}$ be uniform across the drain? Then wouldn't all components of the electric field be horizontal?







voltage transistors mosfet semiconductors






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asked 4 hours ago









jeanluc

1182




1182








  • 1




    Read this ittc.ku.edu/~jstiles/312/handouts/… (page 5,6 ). And this also can help ittc.ku.edu/~jstiles/312/handouts/…
    – G36
    4 hours ago














  • 1




    Read this ittc.ku.edu/~jstiles/312/handouts/… (page 5,6 ). And this also can help ittc.ku.edu/~jstiles/312/handouts/…
    – G36
    4 hours ago








1




1




Read this ittc.ku.edu/~jstiles/312/handouts/… (page 5,6 ). And this also can help ittc.ku.edu/~jstiles/312/handouts/…
– G36
4 hours ago




Read this ittc.ku.edu/~jstiles/312/handouts/… (page 5,6 ). And this also can help ittc.ku.edu/~jstiles/312/handouts/…
– G36
4 hours ago










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The width of the conducting channel at any point is a function of the voltage between that point in the channel and the gate.



If Vds is zero, source and drain are at the same potential. So the potential at each point across the channel will also be the same (zero). The channel has constant width.



If Vds is (say) 1V, now there is a 1V potential distribution across the channel. Now the potential between gate and each point in the channel is not equal - it decreases as you get closer to the more positive end (drain). Let's say Vgs = 5V - that means that Vgd would be only 4V.



Hence the width of the conducting channel will decrease. This is what they are showing in the figure.






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    The width of the conducting channel at any point is a function of the voltage between that point in the channel and the gate.



    If Vds is zero, source and drain are at the same potential. So the potential at each point across the channel will also be the same (zero). The channel has constant width.



    If Vds is (say) 1V, now there is a 1V potential distribution across the channel. Now the potential between gate and each point in the channel is not equal - it decreases as you get closer to the more positive end (drain). Let's say Vgs = 5V - that means that Vgd would be only 4V.



    Hence the width of the conducting channel will decrease. This is what they are showing in the figure.






    share|improve this answer


























      2














      The width of the conducting channel at any point is a function of the voltage between that point in the channel and the gate.



      If Vds is zero, source and drain are at the same potential. So the potential at each point across the channel will also be the same (zero). The channel has constant width.



      If Vds is (say) 1V, now there is a 1V potential distribution across the channel. Now the potential between gate and each point in the channel is not equal - it decreases as you get closer to the more positive end (drain). Let's say Vgs = 5V - that means that Vgd would be only 4V.



      Hence the width of the conducting channel will decrease. This is what they are showing in the figure.






      share|improve this answer
























        2












        2








        2






        The width of the conducting channel at any point is a function of the voltage between that point in the channel and the gate.



        If Vds is zero, source and drain are at the same potential. So the potential at each point across the channel will also be the same (zero). The channel has constant width.



        If Vds is (say) 1V, now there is a 1V potential distribution across the channel. Now the potential between gate and each point in the channel is not equal - it decreases as you get closer to the more positive end (drain). Let's say Vgs = 5V - that means that Vgd would be only 4V.



        Hence the width of the conducting channel will decrease. This is what they are showing in the figure.






        share|improve this answer












        The width of the conducting channel at any point is a function of the voltage between that point in the channel and the gate.



        If Vds is zero, source and drain are at the same potential. So the potential at each point across the channel will also be the same (zero). The channel has constant width.



        If Vds is (say) 1V, now there is a 1V potential distribution across the channel. Now the potential between gate and each point in the channel is not equal - it decreases as you get closer to the more positive end (drain). Let's say Vgs = 5V - that means that Vgd would be only 4V.



        Hence the width of the conducting channel will decrease. This is what they are showing in the figure.







        share|improve this answer












        share|improve this answer



        share|improve this answer










        answered 2 hours ago









        dmb

        1,370412




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